K-band SP4T
Electrical Characteristics in QFN package
Full Temperature Range
Symbol/Pins
Frequency range
Isolation
Insertion loss
Return loss
Input power at 1 dBc@24GHz
Switching speed
Operating temperature range
Vdd/5V
Pi (i =1,2,3,4)
Pi (i =1,2,3,4)
Pi (i =1,2,3,4)
Positive Supply Voltage
Supply current
Leakage Current
OFF state Control Voltage (High state)
ON state Control Voltage (Low State)
4
-40
18
Parameters
Min
23
32
CHS2411-QDG
Typ
35
2.9
15
23.5
80
25
5
5.5
1
5
0
Max
26
Unit
GHz
dB
dB
dB
dBm
ns
100
°C
V
8
5
2
mA
uA
V
V
Remarks :
- By design the ports OUT1 and OUT2 are respectively symmetrical to ports OUT4 and OUT3.
These performance has been obtained with the chip in QFN package mounted on the recommended
boards (ref. 96148 & 95619) described in the document. The performances are highly dependent on
this environment.
Truth Table
Control Pin
P1
Low
High
High
High
P2
High
Low
High
High
P3
High
High
Low
High
P4
High
High
High
Low
IN to Out1
ON
OFF
OFF
OFF
Signal Path State
IN to Out2
OFF
ON
OFF
OFF
IN to Out3
OFF
OFF
ON
OFF
IN to Out4
OFF
OFF
OFF
ON
Absolute Maximum Ratings
(1)
Symbol
Vdd
Pin
Top
Tch
Parameters
Positive supply voltage
Maximum peak input power overdrive
Operating temperature range
Storage temperature range
Values
6
26
-40 to +100
-55 to +125
Unit
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage. Duration < 1s
Ref. : DSCHS2411QDG6174 - 23 Jun 06
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
