37-40GHz Integrated Down Converter
Absolute Maximum Ratings
(1)
CHR3894-QEG
Tamb.= +25°C
Symbol
Parameter
VD, VD1
Drain bias voltages
IDt
Drain bias current
VGL, VGX Gate bias voltages
GC
Gain Control voltage
P_RF
Maximum peak input power overdrive
(2)
P_LO
Maximum LO input power
Tj
Junction temperature
(2)
Ta
Operating temperature range
Tstg
Storage temperature range
(1)
Operation of this device above anyone of these parameters
damage.
(2)
Duration < 1s.
Values
Unit
4.5V
V
340
mA
-2 to +0.4
V
-2.5 to +0.8
V
+15
dBm
+15
dBm
175
°C
-40 to +85
°C
-55 to +150
°C
may cause permanent
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad N
o
VD1, VD
10, 11
ID1
10
VGL
9
VGX
12
GC
8
Parameter
DC drain voltages (LNA and LO-chain)
LNA drain current controlled with VGL
LNA DC gate voltage
Multiplier DC gate voltage
Gain control DC voltage
Values
4
125
-0.1
-0.9
-2 to 0.6
Unit
V
mA
V
V
V
Ref. : DSCHR3894-QEG2201 -19 jul 12
3/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
