CHR3662-QDG
Electrical Characteristics
Tamb = +25° Vd= 4.5V
C,
Symbol
F
RF
F
LO
F
IF
G
c
∆G
NF
IFR
P
LO
IIP3
Parameter
RF frequency range
LO frequency range
IF frequency range
7-16GHz Down Converter
Min
7
4.5
DC
11
Typ
Max
16
19.5
3.5
Unit
GHz
GHz
GHz
dB
Conversion gain @ V2_V3=-1.5V (1) (gain max)
Conversion gain @ V2_V3=+0.5V (1) (gain min)
Gain control range
Noise Figure @ V2_V3=-1.5V (gain max)
Image Frequency Rejection (1)
LO Input power
Input IP3@ gain max.
Input IP3 all attenuation
14
-4
-2
dB
dB
13
15
3
3.5
dB
dBc
dBm
dBm
13
15
0
0
-3
-7
-9
-5
-35
4.5
-6
-6
-4
LO RL
RF RL
LO/RF
Vd
Id
VG
V2_V3
B
VGM
LO Return Loss
RF Return Loss @ Gain max
RF Return Loss @ Gain min
LO leakage at RF port @ max. gain
DC drain voltage
Drain current
DC gate voltage LNA
DC gain control voltage
DC gate control voltage LO buffer
DC gate voltage mixer
-1.5
210
dB
dB
dBm
V
280
-0.3
350
mA
V
0.5
-5
-1
V
V
V
(1) An external combiner 90° is necessary on I / Q.
Note: Id is not affected by V2, V3.
These values are representative of onboard measurements as defined on the drawing given in the
paragraph “Evaluation mother board".
Ref. : DSCHR3662-QDG9169 - 18 Jun 09
2/16
Specifications subject to change without notice
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Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
