CHR3693-QDG
Electrical Characteristics
21-26.5GHz Down Converter
Tamb=25° Vdx=Vdl = 4V, Typical Vgx = -0.9V & Vgm= -0.7V
C,
These values are representative of onboard measurements (on connector access planes) as
defined on the drawing 96401
Symbol
F
RF
F
LO
F
IF
G
c
NF
P
LO
Img Sup
IIP3
LO
VSWR
RF
VSWR
LO/RF
2LO/RF
Id
Parameter
RF frequency range
LO frequency range
IF frequency range
Conversion gain
Noise Figure
LO Input power
Image Suppression (1)
Input IP3
Input LO VSWR
Input RF VSWR (21 to 23.6GHz)
Input RF VSWR (24.5 to 26.5GHz)
Isolation LO
→
RF
Isolation 2LO
→
RF
Bias current (2)
Min
21
9
DC
14
3
2
18
-5
2.0:1
1.7:1
2.3:1
45
35
160
dBc
dBc
mA
Typ
Max
26.5
14
3.5
Unit
GHz
GHz
GHz
dB
dB
dBm
dBc
dBm
(1) With external I/Q 90° hybrid coupler
(2) Typically, Idl= 90mA, Idx=70mA
Absolute Maximum Ratings
(1)
Tamb = +25°
C
Symbol
Vd
Id
Vg
P_RF
P_LO
Tch
Ta
Tstg
Parameter
Maximum drain bias voltage
Maximum drain bias current
Gate bias voltage
Maximum RF input power
Maximum LO input power
Maximum channel temperature (2)
Operating temperature range
Storage temperature range
Values
4.5
230
-2.0 to +0.4
10
10
175
-40 to +85
-55 to +125
Unit
V
mA
V
dBm
dBm
°
C
°
C
°
C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Thermal Resistance channel to ground paddle = 63.6°
C/W for Tamb. = +85°
C
Ref. : DSCHR3693QDG7264 - 21 Sep 07
2/10
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
