12-16GHz Integrated Down Converter
Absolute Maximum Ratings
(1)
Tamb.= +25°C
Symbol
Parameter
VD, VDL
Maximum drain bias voltage
Id_total
Maximum drain bias current
VGL
LNA DC gate voltage
B
Buffer, Mixer DC gate voltage
GC
Gain control voltage
P_RF
Maximum peak input power overdrive
P_LO
Maximum LO input power
Tch
Maximum channel temperature
Ta
Operating temperature range
Tstg
Storage temperature range
(1)
CHR3352-QEG
Values
4.5
420
-2.0 to +0.4
-4
-2.5 to + 0.8
10
5
175
-40 to +85
-55 to +150
Unit
V
mA
V
V
V
dBm
dBm
°C
°C
°C
Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad N
o
VDL, VD
10, 11
IDL
10
VG2, 3
8, 9
B
12
GC
7
Parameter
DC drain voltages
LNA current controlled with VG2, 3
LNA DC gate voltage
Buffer DC gate voltage
Gain control DC voltage
Values
4
120
-0.5
-3
-1.5 to 0
Unit
V
mA
V
V
V
Ref. : DSCHR3352-QEG1192 - 11 Jul 11
3/16
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
