CHR2411-QDG
Electrical Characteristics
22-24.5GHz RX Multifunction
Tamb.= +25°C
Symbol
Parameter
RF
Frequency range
LO
Frequency range
IF
Frequency range
RF
Return Loss
LO
Return Loss
IF
IF Load impedance
PLO
LO Drive Power
Gc
Conversion Gain
ΔG(T)
Gain variation over Temperature
NF
SSB Noise figure (IF=1MHz)
P
in
-1dB
Input Power at 1dB Gain Comp. @24GHz
IP3_IN
Input IP3 @24GHz
Iso
LO to RF Isolation
+Vg, +Vd Supply Voltage
+I
Supply Current
Top
Operating temperature range
Min
22
22
DC
Typ
0
19
-40
-15
-15
50
5
23
2.5
7
-21
-12
-45
5
60
25
Max
24.5
24.5
1.0
-8
-8
27
-30
80
105
Unit
GHz
GHz
MHz
dB
dB
Ω
dBm
dB
dB
dB
dBm
dBm
dB
V
mA
°C
These performance has been obtained with the chip in QFN package mounted on the
recommended boards (ref. 95541 & 95581) described in this document. These performances
are highly dependent on this environment.
Absolute Maximum Ratings
(1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
+Vg, +Vd Maximum positive supply voltage
6
V
+I
Maximum positive supply voltage
90
mA
PLO
Maximum peak input power overdrive
8
dBm
PRF
Maximum peak input power overdrive
-12
dBm
Top
Operating temperature range
-40 to +105
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
Ref. : CHR2411-QDG3116 - 26 Apr 13
2/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
