CHR2299-99F
40-44GHz Down converter
Electrical Characteristics
Tamb. = +25°C
Symbol
Parameter
Min
Typ
Max
Unit
F_RF
RF frequency range
LO frequency range
IF frequency range
40
44
GHz
F_LO
F_IF
9.5
DC
11.5
2.0
GHz
GHz
dB
Gc
Conversion gain
21
12
0
Im rej
P_LO
NF
Image rejection
dB
LO Input power
dBm
dB
Noise figure for IF>0.1GHz
Intermodulation level at Pin2tones = -30dBm
RF Return Loss
4.5
45
6
IMD3
RL_RF
RL_LO
P_4FLO
dBc
dB
LO Return Loss
12
-1
dB
Output power at 4LO_OUT port
dBm
dBm
V
4xFLO_Lk 4xFLO leakage on RF port
-38
4
DX, DA
GM
LO multiplier, buffer and LNA biasing
Mixer gate biasing
-0.6
-0.3
-1.2
240
V
G3
LO buffer gate biasing
Multiplier gate biasing
Total biasing current
V
GX
V
IdT
mA
Electrostatic discharge sensitive device observe handling precautions!
These values are representative of chip on board measurements with a 90° hybrid coupler.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
DX, DA
IdT
Parameter
LO multiplier, buffer and LNA biasing
Total biasing current
Values
4.5
Unit
V
300
mA
V
GM, G3, GX Gate bias voltage
-2; +0.6
10
P_LO
Pin_RF
Tj
Maximum peak input LO power overdrive (2)
Maximum peak input RF power overdrive (2)
Junction temperature
dBm
dBm
°C
-5
175
Ta
Operating temperature range
-40 to +85
°C
Tstg
RTh
Storage temperature range
-55 to +155 °C
80 °C/W
Thermal resistance, Tback side = +85 °C, Ptotal = 0.96 W
(1) Operation of this device above anyone of these parameters may cause permanent damage
(2) Duration < 1s
Ref. : DSCHR22992012 - 19 Jan 12
2/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
