CHR2297
Electrical Characteristics
Tamb=+25°
C
Symbol
F
RF
F
LO
F
IF
G
c
P
LO
36-44GHz MFC Down-Converter
Parameter
Min
36
30
2
Typ
Max
44
39
6
Unit
GHz
GHz
GHz
dB
dBm
dBm
dBm
dBm
dBm
RF frequency range
LO frequency range
IF frequency range
Conversion Gain
LO Input power
2.5
0
-28
-22
-50
+4
2.0:1
2.0:1
2.0:1
4
-1
65
LO_IF Lk LO Leakage on IF (for P
LO
=0dBm)
LO_RF Lk LO Leakage on RF (for P
LO
=0dBm)
RF_IF Lk RF Leakage on IF (for P
RF
=-5dBm)
P1dB
Input power at 1dB gain compression
(1)
LO Match LO Matching
(1)
RF Match RF Matching
IF Match IF Matching
Vd
Vg
Id
Drain bias voltage (pads Vd1, Vd2)
Gate bias voltage (pad Vg)
Drain bias current
V
V
mA
(1) A wire bond of typically 0.1 to 0.15 nH will improve the input and output matching.
Absolute Maximum Ratings
(1)
Tamb = +25°
C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
4.5
V
Id
Drain bias current
100
mA
P
LO
Maximum LO input power
5
dBm
Ta
Operating temperature range
-40 to +85
°
C
Tstg
Storage temperature range
-55 to +125
°
C
(1) Operation of device above anyone of these parameters may cause permanent damage.
Ref.: DSCHR22970204 - 23 Jul 10
2/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
