CHR2296
Tamb = +25°C, Vd = 3.5V
Symbol
F
RF
F
LO
F
IF
G
c
NF
P
LO
Img Sup
P1dB
LO
VSWR
RF
VSWR
36-40GHz Down Converter
Electrical Characteristics for Broadband Operation
Parameter
Min
36
17
DC
9
11
5
+10
13
15
-10
2.0:1
3.0:1
Typ
Max
40
20
1.5
Unit
GHz
GHz
GHz
dB
dB
dBm
dBc
dBm
RF frequency range
LO frequency range
IF frequency range
Conversion gain
(1)
Noise Figure, for IF>0.1GHz
(1)
LO Input power
Image Suppression
Input power at 1dB gain compression
Input LO VSWR
(1)
Input RF VSWR
(1)
Id
Bias current
(2)
110
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances for Idm =
50mA and Idl = 60mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Maximum drain bias voltage
4.0
V
Id
Maximum drain bias current
200
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Vgd
Minimum negative gate drain voltage ( Vg – Vd)
-5
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Tch
Maximum channel temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Ref. : DSCHR22961192 - 11 Jul 11
2/6
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
