20-24GHz MFC Down Converter
Electrical Characteristics for Broadband Operation
CHR2293
Tamb = +25°C, Vdm = Vdl = 3.5V, Vgm=-0.9V, Vgb=-0.7V, Vgx=-0.8V, Vga=-0.55V
Symbol
F
RF
F
LO
F
IF
G
c
NF
P
LO
Img Sup
P1dB
Parameter
RF frequency range
LO frequency range
IF frequency range
Conversion gain (1)
Noise Figure (1)
LO Input power
Image Suppression (2)
Input power at 1dB gain compression
Min
20
9.25
0.25
Typ
Max
24
12.75
1.5
Unit
GHz
GHz
GHz
dB
dB
dBm
dBc
dBm
+11
4
+10
13
17
-8
2.0:1
2.0:1
130
LO VSWR Input LO VSWR (1)
RF VSWR Input RF VSWR (1)
Id
Bias current (3)
mA
(1) On Wafer measurements
(2) With external I/ Q combiner
(3) Current source biasing network is recommended. Optimum performances for Idm= 50mA
and Idl= 80mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Pin
Ta
Tstg
Drain bias voltage
Drain bias current
Gate bias voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Parameter
Values
4.0
200
-2.0 to +0.4
+15
-40 to +85
-55 to +155
Unit
V
mA
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref.: DSCHR22935168 - 17 Jun 05
2/4
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
