CHR2291
12-17GHz Integrated Down Converter
Electrical Characteristics for Broadband Operation
Tamb = +25° Vd = 3.5V ,Idl=50mA, Idm=50mA
C,
Symbol
F
RF
F
LO
F
IF
G
c
NF
P
LO
Img Sup
P1dB
Parameter
RF frequency range
LO frequency range
IF frequency range
Conversion gain (1)
Noise Figure, for IF>0.1GHz (1)
LO Input power
Image Suppression
Input power at 1dB gain compression
Min
12
5.25
DC
Typ
Max
17
7.75
1.5
Unit
GHz
GHz
GHz
dB
dB
dBm
dBc
dBm
+10
3.5
+10
15
-8
2.0:1
2.0:1
100
LO VSWR Input LO VSWR (1)
RF VSWR Input RF VSWR (1)
Id
Bias current (2)
mA
(1) On Wafer measurements
(2) Current source biasing network is recommended. Optimum performances for Idm= 50mA
and Idl= 50mA
Absolute Maximum Ratings
Tamb. = 25° (1)
C
Symbol
Vd
Id
Vg
Vdg
Pin
Tch
Ta
Tstg
Parameter
Maximum drain bias voltage
Maximum drain bias current
Gate bias voltage
Maximum drain to gate voltage ( Vd– Vg)
Maximum peak input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
Values
4.0
180
-2.0 to +0.4
+5
+15
175
-40 to +85
-55 to +125
Unit
V
mA
V
V
dBm
°
C
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : : DSCHR22911192 - 11 Jul 11
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
