25-32GHz SSB Mixer
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.5V Id=55mA
Symbol
F
RF
F
LO
F
IF
L
c
P
LO
CHM1291
Parameter
RF frequency range
LO frequency range
IF frequency range
Conversion Loss
LO Input power
Min
25
12
0.1
Typ
Max
32
15.5
3
Unit
GHz
GHz
GHz
dB
dBm
11
+5
-35
10
-2
15
+1
+3
+9
2.0:1
2.0:1
2.0:1
2.6
55
15
2xLO Leak 2xLO Leakage (for P
LO
=+5dBm)
Img Rej
P1dB
P03
IP3
LO Match
RF Match
IF Match
Sz
Id
Image Rejection (1)
Input power at 1dB gain compression
Input power at 3dB gain compression
Input 3 order intercept point
LO VSWR
RF VSWR
IF VSWR
Chip size
Bias current
rd
-30
dBm
dBc
dBm
dBm
dBm
mm²
mA
(1) With external quadrature hybrid coupler (reference on request). The minimal value depends
on the quality of the external quadrature combiner.
Current source biasing network is recommended.
A bonding wire of typically 0.1 to 0.15 nH will improve the accesses matching.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Ta
Tstg
Drain bias voltage
Drain bias current
Operating temperature range
Storage temperature range
Parameter
Values
4.0
100
-40 to +85
-55 to +155
Unit
V
mA
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHM12912266 - 23-Sept.-02
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
