CHM1190
K Band Mixer
GaAs Monolithic Microwave IC
Description
The CHM1190 is a balanced Schottky
diode mixer based on a six quarter wave
ring structure. It could be use in receiver or
transmitter part.
This circuit is manufactured with the BES-
MMIC process: 1 µm Schottky diode
device, air bridges, via holes through the
substrate, stepper lithography.
An electrically identical chip with a mirror
drawing versus de LO side is available
under the part number CHM1191. These
two MMICs could be helpful in a TX, RX
architecture module.
It is available in chip form.
LO
IF
RF
-2
IF=2GHz
Conversion gain (dB)
-4
-6
-8
-10
-12
21
22
23
LO Frequency (GHz)
24
25
Main Features
■
22-24 GHz LO frequency range
■
IF from 1 to 3 GHz
■
Low conversion loss up & down
■
High LO/RF isolation
■
Low LO input power
■
Small chip size: 1.73 x 1.53 x 0.10 mm
Typical conversion characteristic
(measurement in test fixture)
Main Characteristics
Tamb. = 25°C
Symbol
F_LO,
F_IF
Lc
I_LO/RF
Parameter
LO frequency range
IF frequency range
Conversion loss @ P-LO = 7dBm
LO/RF isolation
Typ
22-24
1-3
7
30
Unit
GHz
GHz
dB
dBc
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. :DSCHM11909025
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
