CHM1190
Electrical Characteristics
Tamb. = 25°C
Symbol
F_LO
F_IF
Lc
P_LO
P-1dB
VSWR_LO
VSWR_RF
VSWR_IF
I_LO/RF
K band Mixer
Parameter
LO frequency range
IF frequency range
Conversion loss @ P-LO = 7dBm (1)
LO input power
Input 1dB compression
LO port VSWR (50Ω) (2)
RF port VSWR (50Ω) (2)
RF port VSWR (50Ω) (2)
LO/RF isolation
Min
22
1
Typ
Max
24
3
Unit
GHz
GHz
dB
7
5
7
7
2.5:1
2.5:1
2.5:1
30
9
dBm
dBm
dBc
(1) On wafer measurements.
(2) Depends on the wire bonding conditions and on the external matching network.
Absolute Maximum Ratings
(1)
Tamb = +25°C
Symbol
P_LO
P_RF
P_IF
Top
Tstg
Parameter
Maximum peak input power overdrive at LO port (2)
Maximum peak input power overdrive at RF port (2)
Maximum peak input power overdrive at IF port (2)
Operating temperature range
Storage temperature range
Values
10
10
10
-40 to +85
-55 to +125
Unit
dBm
dBm
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
Ref. : DSCHM11909025
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
