CHK080A-SRA
80W Power Packaged Transistor
GaN HEMT on SiC
Description
The CHK080A-SRA is an unmatched
Packaged Gallium Nitride High Electron
Mobility Transistor. It offers general purpose
and broadband solutions for a variety of RF
power applications. It is well suited for multi-
purpose applications such as radar and
telecommunication.
The CHK080A-SRA is developed on a 0.5µm
gate length GaN HEMT process. It requires
an external matching circuitry.
The CHK080A-SRA is available in a
ceramic-metal
flange
power
package
providing low parasitic and low thermal
resistance.
Main Features
Gain (dB), Pout (dBm) & PAE (%)
V
DS
= 50V, I
D_Q
= 600mA, Freq=3GHz
Pulsed mode
65
60
55
50
45
40
35
30
25
20
15
10
5
0
6
8
10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40
4
Id
3.5
3
2.5
2
1.5
Gain
1
0.5
0
Input Power (dBm)
Intrinsic performances of the package device
Main Electrical Characteristics
Tcase= +25°C,
Pulsed mode,
F=3GHz, V
DS
=50V, I
D_Q
=600mA
(I
D_Q
=300mA on each transistor)
Symbol
Parameter
Min
Typ
Max
Unit
G
SS
Small Signal Gain
17
-
dB
P
SAT
Saturated Output Power
80
100
-
W
Max Power Added Efficiency
PAE
50
65
-
%
G
PAE_MAX
Associated Gain at Max PAE
13
-
dB
Ref. : DSCHK080A-SRA3148 - 28 Jun 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Drain Current (A)
■ Wide band capability: up to 3.5GHz
■ Pulsed and CW operating modes
■ High power : > 80W
■ High Efficiency : up to 70%
■ DC bias: V
DS
=50V @ I
D_Q
=600mA
■ MTTF > 10
6
hours @ Tj=200°C
■ RoHS Flange Ceramic package
Pulsed mode at 3GHz
6.5
PAE
Pout
6
5.5
5
4.5
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
