40W Power Packaged Transistor
Recommended DC Operating Ratings
Tcase= +25°C
Symbol
Parameter
V
DS
Drain to Source Voltage
V
GS_Q
Gate to Source Voltage
I
D_Q
Quiescent Drain Current
I
D_MAX
Drain Current
Gate Current (forward
mode)
T
j_MAX
Junction temperature
(1)
Limited by dissipated power
I
G_MAX
Min
20
Typ
-1.8
0.3
2
0
Max
50
1
(1)
CHK040A-SOA
Unit
V
V
A
A
mA
°C
Conditions
V
D
=50V, I
D_Q
=300mA
V
D
=50V
V
D
=50V,
Compressed mode
Compressed mode
24
200
DC Characteristics
Tcase= +25°C
Symbol
Parameter
Min
Typ
Max Unit
Conditions
V
P
Pinch-Off Voltage
-3
-2
-1
V
V
D
=50V, I
D
= I
DSS
/100
I
D_SAT
Saturated Drain Current
8
(1)
A
V
D
=7V, V
G
=2V
Gate Leakage Current
I
G_leak
-3
mA V
D
=50V, V
G
=-7V
(reverse mode)
Drain-Source
V
BDS
200
V
V
G
=-7V, I
D
=20mA
Break-down Voltage
°C/W
R
TH
Thermal Resistance
2.85
(1)
For information, limited by I
D_MAX
, see on Absolute Maximum Ratings
RF Characteristics (CW)
Tcase= +25°C,
CW mode,
F = 3GHz, V
DS
=50V, I
D_Q
=300mA
Symbol
Parameter
G
SS
Small Signal Gain
P
SAT
Saturated Output Power
Max Power Added Efficiency
PAE
G
PAE_MAX
Associated Gain at Max PAE
Min
15
40
50
Typ
17
50
55
12
Max
-
-
-
-
Unit
dB
W
%
dB
Ref. : DSCHK040ASOA3021 - 21 Jan 13
2/14
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
