CHK040A-SOA
40W Power Packaged Transistor
GaN HEMT on SiC
Description
The CHK040A-SOA is an unmatched
packaged Gallium Nitride High Electron
Mobility Transistor. It offers general purpose
and broadband solutions for a variety of RF
power applications. It is well suited for multi-
purpose applications such as radar and
telecommunication
The CHK040A-SOA is developed on a 0.5µm
gate length GaN HEMT process. It requires
an external matching circuitry.
The CHK040A-SOA is available in a ceramic-
metal flange power package providing low
parasitic and low thermal resistance.
Main Features
Gain (dB), Pout (dBm) & PAE (%)
V
DS
= 50V, I
D_Q
= 300mA, Freq=3GHz
Pulsed mode
60
55
■ Wide band capability: up to 3.5GHz
■ Pulsed and CW operating modes
■ High power: > 45W
■ High Efficiency: up to 70%
■ DC bias: V
DS
=50V @ I
D_Q
=300mA
■ MTTF > 10
6
hours @ Tj=200°C
■ RoHS Flange Ceramic package
Pulsed Mode at 3GHz
PAE
Pout
Id
3.3
3
50
45
40
35
30
2.7
2.4
2.1
1.8
1.5
1.2
0.9
25
20
15
10
5
0
Gain
12 14 16 18 20 22 24 26 28 30 32 34 36 38
0.6
0.3
0
Input Power (dBm)
Intrinsic performances of the packaged device
Main Electrical Characteristics
Tcase= +25°C,
Pulsed mode,
F = 3GHz, V
DS
=50V, I
D_Q
=300mA
Symbol
Parameter
Min
16
G
SS
Small Signal Gain
P
SAT
PAE
G
PAE_MAX
Saturated Output Power
Max Power Added Efficiency
Associated Gain at Max PAE
45
55
Typ
18
55
60
13
Max
-
-
-
-
Unit
dB
W
%
dB
Ref. : DSCHK040ASOA3021 - 21 Jan 13
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Id (A)
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
