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CHE1270-QAG 参数 Datasheet PDF下载

CHE1270-QAG图片预览
型号: CHE1270-QAG
PDF下载: 下载PDF文件 查看货源
内容描述: 12-40GHz宽带探测器 [12-40GHz Wide Band Detector]
分类和应用:
文件页数/大小: 8 页 / 439 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHE1270-QAG
RoHS COMPLIANT
12-40GHz Wide Band Detector
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHE1270-QAG is a detector that
integrates a matched detector diode (Vdet)
and a reference diode (Vref).
It is designed for a wide range of applications
where an accurate transmitted power control
is required, typically commercial
communication systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
It is available in leadless SMD package.
Vdet
DC
Vref
UMS
E1270
YYWW
RF IN
CHE1270
Matching
Main Features
Wide frequency range: 12-40GHz
30dB dynamic range
Vdetect= Vref-Vdet (mV)
Transmitted power detection (mV)
10000
12 GHz
32GHz
1000
17GHz
37GHz
22GHz
40GHz
27GHz
ESD protected
16L-QFN3x3 SMD package
100
10
Main Characteristics
Tamb = +25° VDC = +4.5V
C,
Symbol
F
Dr
RL
Parameter
Frequency range
Dynamic range
Return Loss
1
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
Input power (dBm)
Min
12
Typ
Max
40
Unit
GHz
dB
dB
30
-10
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHE1270-QAG8205 - 25 Jun 08
1/8
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09