CHE1260-QAG
Electrical Characteristics
Tamb = +25° VDC = +4.5V (on DC_I and DC_R)
C,
10-27GHz Detector
Symbol
F
IL
Cd
Dr
Frequency range
Insertion Loss
Coupler Directivity
Parameter
Min
10
Typ
Max
27
Unit
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
1
15
15
8
15
-1
-3
-6
-8
20
3500
Pd
Vdetect_I
Vdetect_R
RLin
RLout
VDC
IDC
Dynamic Range :
10 - 12GHz
12 - 24GHz
24 - 27GHz
Power detection :
10 - 17GHz
17 - 21GHz
21 - 24GHz
24 - 27GHz
Voltage detection from transmitted power
Vref_R – Vdet_I
From Pd_min to Pd_max
Voltage detection from reflected power
Vref_I – Vdet_R
From Pd_min to Pd_max
Input return loss
Output return loss
Bias Voltage
Bias Current (on ports DC_I or DC_R)
mV
20
-12
-12
4.5
25
33
3500
-9
-9
mV
dB
dB
V
µA
45
These values are representative of on board measurements as defined in notes, with 100kΩ resistor in
parallel on pads Vdet_I, Vref_I, Vdet_R and Vref_R (see notes).
Absolute Maximum Ratings
(1)
Tamb = +25°
C
Symbol
VDC
Top
Tstg
P_max
Parameter
Bias voltage (on ports DC_I and DC_R)
Operating temperature range
Storage temperature range
Values
6
-40 to +85
-55 to +125
Unit
V
°
C
°
C
Maximum power
30
dBm
(for transmitted and/or reflected power)
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
Thermal datas: Pdc_max = 50µA x 1V = 50µW and PRF_max = 20mW
Tj_max = 175° for maximum ratings
C
Ref. : DSCHE1260QAG0200 - 19 Jul 10
2/14
Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
