CHA7115-99F
Electrical Characteristics on wafer
X-band High Power Amplifier
Tamb = 20°C, Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Fop
G
RLin
RLout
P_4dBc
PAE_4dB
Id_4dB
Vd1, Vd2, Vd3
Id
Vg
Parameter
Operating frequency
Small signal gain
Input Return Loss
Output Return Loss
Output power @ 4dBcomp (2)
Power Added Efficiency @ 4dBcomp
Supply drain current @ 4dBcomp
Drain supply voltage (2)
Supply quiescent current (1)
Gate supply voltage
Min
8.5
Typ
27.5
10
12
39
37
2.6
8
2.2
-1.4
Max
11.5
Unit
GHz
dB
dB
dB
dBm
%
A
V
A
V
(1) Parameter can be adjusted by tuning of Vg.
(2) 0.5V variation on Vd leads to around 0.4dB variation of the output power (impact on
robustness see Maximum ratings).
Absolute Maximum Ratings (1)
Tamb = 20°C
Symbol
Cmp
Vd
Id
Id_sat
Vg
Tj
Tstg
Top
(1)
(2)
(3)
Parameter
Compression level (2)
Supply voltage (3)
Supply quiescent current
Supply current in saturation
Supply voltage
Maximum junction temperature
Storage temperature range
Operating temperature range
Values
6
10
2.8
4
-0.8
175
-55 to +150
-40 to +80
Unit
dB
V
A
A
V
°C
°C
°C
Operation of this device above anyone of these parameters may cause permanent
damage.
For higher compression the level limit can be increased by decreasing the voltage
Vd using the rate 0.5V/dBc.
Without RF input power.
Ref DSCHA71151069 - 10 Mar 11
2/6
Specifications subject to change without notice
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Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
