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CHA7115-99F 参数 Datasheet PDF下载

CHA7115-99F图片预览
型号: CHA7115-99F
PDF下载: 下载PDF文件 查看货源
内容描述: X波段高功率放大器 [X-band High Power Amplifier]
分类和应用: 放大器功率放大器
文件页数/大小: 6 页 / 141 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA7115-99F
RoHS COMPLIANT
X-band High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA7115 is a monolithic three-stage
GaAs high power amplifier designed for
X-band applications.
The HPA provides typically 8W output power
associated to 36% power added efficiency at
4dBcomp and a high robustness on
mismatch load.
This device is manufactured using 0.25µm
Power pHEMT process, including, via holes
through the substrate and air bridges.
It is available in chip form.
Vg2 Vd2
Vg3 Vd3
Vg1
IN
OUT
Vd1
Vd2
Vg3 Vd3
Pout (dBm) & PAE (%) & Gain (dB)
Main Features
0.25µm Power pHEMT Technology
Frequency band: 8.5 – 11.5GHz
Output power : 39dBm @ 4dBcomp
High linear gain: > 27dB
High PAE : 37% @ 4dBcomp
Quiescent bias point: Vd=8V, Id=2.2A
Chip size
:
4.59 x 3.31 x 0.07mm
44
42
40
38
36
34
32
30
28
26
24
22
8
8.5
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Pulse : 25µs 10%
Linear Gain
PAE @ 4dBc
Pout @ 4dBc
Main Characteristics
Vd = 8V, Id (Quiescent) = 2.2A, Drain Pulse width = 25µs, Duty cycle = 10%
Symbol
Parameter
Min
Typ
Fop
PAE_4dB
P_4dB
G
Operating frequency range
Power added efficiency @4dBcomp @ 20°C
Output power @ 4dBcomp @ 20°C
Small signal gain @ 20°C
8.5
37
39
27.5
Max
11.5
Unit
GHz
%
dBm
dB
ESD Protections: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHA71151069 - 10 Mar 11
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09