CHA6664-QDG
RoHS COMPLIANT
12-16GHz 1W High Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6664-QDG is a three-stages Ku-band
high power amplifier.
The circuit is manufactured with a standard
Power P-HEMT process: 0.25µm gate length,
via holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in RoHS compliant SMD package.
Main Features
35
dB(S21), dB(S11), dB(S22) versus frequency (GHz)
S21, S11, S22 (dB)
■
0.25 µm Power pHEMT Technology
■
12-16 GHz Frequency Range
■
31.5 dBm Saturated Output Power
■
High gain: 28dB
■
Quiescent Bias Point: 8V, 600mA
■
24L-QFN4x4 SMD package
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Frequency (GHz)
dB(S21)
dB(S11)
dB(S22)
Typical on board measurements
Main Characteristics
Tamb = +25° Vd1=Vd2=Vd3=+8V, Id (Quiescent)=600mA , CW biasing mode
C,
Symbol
F_op
P_Sat
G_lin
Parameter
Operating Frequency Range
Saturated output power
Linear Gain
Min
12
31.5
28
Typ
Max
16
Unit
GHz
dBm
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA6664QDG6332 - 28 Nov 06
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
