CHA6518
RoHS COMPLIANT
5 - 18 GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The
CHA6518
is a monolithic three-stage
GaAs high power amplifier designed for wide
band applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process, including,
via holes through the substrate and air
bridges.
To simplify the assembly process:
•
the backside of the chip is both RF and
DC grounded
•
bond pads and back side are gold plated
for compatibility with eutectic die attach
method
and
thermosonic
or
thermocompression bonding process.
Vg
Vg
Vd
Main Features
0.25 µm Power pHEMT Technology
5 - 18 GHz Frequency Range
2W Output Power
24 dB nominal Gain
Quiescent Bias point: 8V ; 1A
Chip size: 5.23 x 3.26 x 0.07 mm
Vg
Vd
50
Ω
IN
Input
matching
Inter-
stage
Stage 1 /
Stage 2
Inter-
stage
Stage 2 /
Stage 3
Output
50
Ω
combiner
OUT
Vd
Vg
Vd
Vg
Vd
Vd = 8 V
Main Characteristics
Tamb = +25° (Tamb is the back-side of the chip)
C
Symbol
Parameter
F_op
P_sat
G_lin
Operating frequency range
Saturated output power
Linear gain
Min
5
33.5
24
Typ
Max
18
Unit
GHz
dBm
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA65185007 - 7 Jan 05
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
