CHA6517
RoHS COMPLIANT
6-18GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The
CHA6517
is a Dual channel
monolithic three-stage GaAs high power
amplifier designed for wide band
applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process,
including, via holes through the substrate
and air bridges.
To simplify the assembly process:
•
the backside of the chip is both RF
and DC grounded
•
bond pads and back side are gold
plated for compatibility with eutectic
die attach method and thermosonic or
thermocompression bonding process.
Vg
Vd3
INPUT A
OUTPUT A
Vd1
Vd2
Vd3
INPUT B
OUTPUT B
Vg
Vd3
Main Features
0.25µm Power pHEMT Technology
6 – 18GHz Frequency Range
32dBm Output Power per channel
Compatible for balanced configuration
22dB nominal Gain
Quiescent Bias point : 600mA @ 8V
per channel
Chip size: 4.32 x 3.90 x 0.07mm
Output Power versus Frequency
Main Characteristics
Tamb=25° (Tamb is the back-side of the chip)
C
Symbol
F_op
Psat
G_lin
Parameter
Operating frequency range
Saturated output power
Linear gain
Min
6
30
19
32
22
Typ
Max
18
Unit
GHz
dBm
dB
Ref. DSCHA65179250 - 07 Sept 09
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
