CHA6252-QFG
Electrical Characteristics
13-15.5GHz Power Amplifier
Tamb.= +25°C, Vd = +7.0V
Symbol
Parameter
Min
Typ
Max
Unit
Freq
Frequency range
13
15.5
GHz
Gain
Linear Gain
22
dB
G_T
Linear gain variation versus Temp
-0.05
dB/°C
RL_in
Input Return Loss
-18
dB
RL_out
Output Return Loss
-11
dB
OP1dB
Output power @1dB compression point
32.5
dBm
Psat
Saturated output power
35
dBm
TOI
Output TOI @10 dB back off of OP1dB
41
dBm
PAE
Power added efficiency @1dB compression
22
%
Idq
Quiescent Drain current
1.1
A
Vg
Gate voltage
-0.45
V
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings
(1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
7.5V
V
Id
Drain bias current
2
A
Vg
Gate bias voltage
-2 to +0
V
Pin
Input continuous power
15
dBm
(2)
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Pad N
o
15, 26, 28, 30,
VDx
32
VGx
9, 10, 12, 14
Parameter
DC Drain voltage
DC Gate voltage tuned for Idq= 1.1A
Values
7
-0.45
Unit
V
V
Ref. : DSCHA6252-QFG2355 - 20 Dec 12
2/12
Specifications subject to change without notice
Bat. Charmille - Parc SILIC - 10,
Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
