CHA6250-QFG
5.5-9GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6250-QFG is a three stages
monolithic GaAs high power circuit that
produces more than 2 Watt output power.
It is designed for commercial communication
systems.
The circuit is manufactured with a pHEMT
process, 0.5µm gate length.
Main Features
■ Broadband performances: 5.5- 9GHz
■ 23.5dB Linear Gain
■ 33.5dBm output power @1dB comp.
■ 43dBm output TOI
■ 29% PAE@ 1dB compression
■ DC bias: Vd=7Volt@Id=0.9A
■ 32L-QFN5x5
36
Output power at 1dB comp.
35
34
Output P1dB (dB)
33
32
31
Temp=25°C
Temp=-40°C
Temp=+85°C
30
29
28
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
Frequency (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq
Frequency range
Gain
Linear Gain
OTOI
Output TOI
Pout
Output Power @1dB comp.
Min
5.5
Typ
23.5
43.0
33.5
Max
9.0
Unit
GHz
dB
dBm
dBm
Ref. : DSCHA6250-QFG2272 - 28 Sep 12
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel
.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
