CHA6105
RoHS COMPLIANT
8-12GHz Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6105 is a monolithic three-stage
medium power amplifier designed for
X-band applications.
The driver provides typically 31.5dBm
output power at saturation and is suitable
for systems requiring a high compression
level. Moreover it includes a biasing
control circuit that makes Pout less
sensitive to spread and chip environment.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
VD1
VD2
VD3
●
IN
●
OUT
VD3
Control circuit
V_C
34
1100
Pout (dBm) @ 3dBc, Linear Gain (dB)
33
32
31
30
29
28
27
26
25
24
23
22
7
7,5
8
8,5
9
Pout (dBm) @ 3dBc
(dBm)
1050
1000
950
Id (mA) @ 3dBc
900
850
800
750
700
Main Features
Frequency range: 8-12GHz
31.5dBm Saturated output power
30dB Linear Gain
Quiescent bias point: 8V@700mA
Chip size: 2.80 x 2.21 x 0.07mm
Linear Gain (dB)
Id (mA) @ 3dBc
(%)
650
600
550
500
9,5
10
10,5
11
11,5
12
12,5
13
Frequency (GHz)
Pout & Id @ 3dB gain compression
and Linear Gain (Pulse 25µs 10% Tamb. 20°
C)
Main Characteristics
Tamb = +20° Vc = +8V (Pulse 25µs 10%)
C,
Symbol
Fop
G
Psat
Idq
Parameter
Operating frequency range
Small signal gain
Saturated output power
Power supply quiescent current
Min
8
30
31.5
700
Typ
Max
12
Unit
GHz
dB
dBm
mA
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA61050106 - 16 Apr 10
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
