CHA5295
Electrical Characteristics
Tamb = +25° Vd = 6V Id #800mA
C,
Symbol
Fop
G
∆G
Is
P1dB
P03
IP3
PAE
VSWRin
24.5-26.5GHz High Power Amplifier
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation
Pulsed output power at 1dB compression (1)
Output power at 3dB gain compression (1)
3
rd
order intercept point (2) (3)
Power added efficiency at 1dB comp.
Input VSWR
Min
24.5
17
Typ
Max
26.5
Unit
GHz
dB
dB
dB
dBm
dBm
dBm
%
18
±1
50
30
31
31.5
41
20
3.5:1
2:1
+155
800
1000
VSWRout Output VSWR
Tj
Id
Junction temperature for 80° backside
C
Bias current @ small signal
°
C
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
(3) Linearity could be improved with a biasing point around 600mA ( see curves on next pages)
Absolute Maximum Ratings
Tamb. = 25° (1)
C
Symbol
Vd
Id
Vg
Ig
Vdg
Pin
Tch
Ta
Tstg
Parameter
Maximum drain bias voltage with Pin
max=12dBm
Maximum drain bias current
Gate bias voltage
Gate bias current
Maximum drain to gate voltage (Vd - Vg)
Maximum input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
2/9
Values
+6.25
1400
-2.5 to +0.4
-5 to +5
+8.0
+15
+175
-40 to +80
-55 to +125
Unit
V
mA
V
mA
V
dBm
°
C
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA52953125 - 05 May 03
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
