CHA5294
Tamb = +25°
C
Symbol
Fop
G
30-40GHz Medium Power Amplifier
Electrical Characteristics on wafer (1)
Parameter
Operating frequency range
Small signal gain from 30 to 34GHz
from 34 to 40GHz
∆G
Is
P1dB
Small signal gain flatness
Reverse isolation
Pulsed output power at 1dB compression from 30 to 34GHz
from 34 to 40GHz
Psat
Saturated power from 30 to 34GHz
from 34 to 40GHz
IP3
Output Intercept point 3rd order from 30 to 34GHz
from 34 to 40GHz
VSWRin
VSWRout
Vd
Id
Input VSWR
Output VSWR
Drain bias DC voltage
Bias current @ small signal
Min
30
Typ
Max
40
Unit
GHz
dB
dB
dB
dBm
24.5
23
±1.5
40
23
22
24.5
23
30
28
2.0:1
4.0:1
3.5
500
650
dBm
dBm
V
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
Absolute Maximum Ratings
Tamb. = 25° (1)
C
Symbol
Vd
Id
Vg
Pin
Tch
Ta
Tstg
Parameter
Maximum Drain bias voltage with Pin max= -2dBm
Drain bias current with Vd=3.5V in small signal
Gate bias voltage
Maximum peak input power overdrive with Vd=3.5V (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
Values
+4.0
700
-2 to +0.4
+6.0
+175
-40 to +80
-55 to +125
Unit
V
mA
V
dBm
°
C
°
C
°
C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA52948205 - 23 Jul 08
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
