CHA5290
17.7-24GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5290 is a high gain four-stage
monolithic medium power amplifier. It is
designed for a wide range of applications, from
military
to
commercial
communication
systems. The backside of the chip is both RF
and DC grounds. This helps simplify the
assembly process.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
34
30
26
22
18
14
10
6
2
-2
-6
-10
-14
-18
-22
-26
-30
14
16
18
20
Vd1
Vd2
Vd3
Vd4
Vg1,2
Vg3
Vg4
Vd4
Main Features
■
Performances : 17.7 -24GHz
■
26dBm output power @ 1dB comp. gain
■
26 dB
±
1dB gain
■
DC power consumption, 400mA @ 6V
■
Chip size : 3.43 x 1.57 x 0.05 mm
S11 (dB)
22
24
S21 (dB)
26
28
30
S22 (dB)
32
34
Frequency (GHz)
Typical on jig Measurements
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Bias current
Min
17.7
Typ
26
26
400
Max
24
Unit
GHz
dB
dBm
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. DSCHA52902295 -22-Oct.-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09