CHA5290
Electrical Characteristics
Tamb = +25°C, Vd = 6V Id =400mA
Symbol
Fop
G
∆G
Is
P1dB
P03
PAE
VSWRin
18-24GHz Medium Power Amplifier
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation
Pulsed output power at 1dB compression (1)
Output power at 3dB gain compression (1)
Power added efficiency at 1dB comp.
Input VSWR (2)
Min
17.7
24
Typ
Max
24
Unit
GHz
dB
dB
dB
dBm
dBm
%
26
±1
40
25
26
27
18
3:1
3:1
165
400
500
VSWRout Output VSWR (2)
Tj
Id
Junction temperature for 80°C backside
Bias current @ small signal
°C
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Ig
Vgd
Pin
Tch
Ta
Tstg
Parameter
Maximum drain bias voltage with Pin max=-2dBm
Maximum drain bias current
Gate bias voltage
Gate bias current
Minimum negative gate drain voltage ( Vg - Vd)
Maximum input power overdrive (2)
Maximum channel temperature
Operating temperature range
Storage temperature range
Values
6.25
625
-2.5 to +0.4
-2.5 to +2.5
-8
3
175
-40 to +80
-55 to +125
Unit
V
mA
V
mA
V
dBm
°C
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. DSCHA52902295 -22-Oct.-02
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
