CHA5093
Electrical Characteristics
Tamb = +25°C, Vd = 6V
Symbol
Fop
G
∆G
Is
P1dB
P03
IP3
PAE
VSWRin
22-26GHz High Power Amplifier
Parameter
Operating frequency range (1)
Small signal gain (1)
Small signal gain flatness (1)
Reverse isolation (1)
Pulsed output power at 1dB compression (1)
Output power at 3dB gain compression
3
rd
order intercept point (2)
Power added efficiency at 1dB comp.
Input VSWR
Min
22
18
Typ
Max
26
Unit
GHz
dB
dB
dB
dBm
dBm
dBm
%
20
±1.5
50
28
29
29.5
40
19
2.3:1
2.3:1
170
600
900
VSWRout Output VSWR
Tj
Id
Junction temperature for 80°C backside
Bias current
°C
mA
(1) These values are representative for pulsed on-wafer measurements that are made without
bonding wires at the RF ports.
(2) Value representative for CW on jig measurement.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Vgd
Pin
Ta
Tstg
Parameter
Drain bias voltage
Drain bias current
Gate bias voltage
Negative gate drain voltage ( = Vg - Vd)
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Values
6
1200
-2.5 to +0.4
-8
+12
-40 to +80
-55 to +155
Unit
V
mA
V
V
dBm
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Ref. : DSCHA50930129 -09 May-00
2/8
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
