CHA5093TCF
Schematic
CHA5093TCF
24-26GHz High Power Amplifier
Vd1,2
Vd3
RF IN
RF OUT
Vg1,2,3
Vd3
Typical Bias Conditions
for an ambient Temperature of +25°C
Symbol
Vd1,2,3
Vg1,2,3
Idd
Pin No.
2, 4 & 8
10
2,4 & 8
Drain bias voltage
First, second & third stages gate bias voltage
Total drain current
Parameter
Values
6
-0.4
600
Unit
V
V
mA
All other pins are not used for this device.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vds
Ids
Vgs
Vdg
Pin
Ta
Tstg
(1)
(2)
(3)
(4)
Parameter
Drain bias voltage_small signal
Drain bias current_small signal
Gate bias voltage
Negative Drain Gate voltage (= Vds – Vgs)
Maximum peak input power overdrive (3)
Operating temperature range (4)
Storage temperature range
Values
6.0
1200
-2 to +0.4
+8
+12
-40 to +70
-55 to +155
Unit
V
mA
V
V
dBm
°C
°C
Operation of this device above anyone of these parameters may cause permanent damage.
6V recommended for up to a max of 1dB gain compression.
Duration < 1s.
Upper temperature limit strongly dependent on motherboard design; ratings given for
ideal thermal coupling
2/6
Specifications subject to change without notice
Ref. : DSCHA50932035 - 04-Feb.-02
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
