CHA5056-QGG
RoHS COMPLIANT
17-27GHz High Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA5056-QGG is a
monolithic high power amplifier.
three-stage
The circuit is manufactured with a power P-
HEMT process, 0.15µm gate length, via holes
through the substrate.
It is supplied in RoHS compliant SMD
package
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
16
15
16
17
Glin & P1dB & Psat versus Frequency
Main Features
■
Broadband performance 17-27GHz
■
28.5dBm Output Power @1dB compression
■
38dBm 3
rd
order intercept point
■
High gain: 19dB
■
ESD protected (see page 6)
■
DC power consumption, 890mA @ 4.5V
■
28LQFN5x5
Gain Linear (dB)
P1dB (dBm)
Psat (dBm)
18
19
20
21 22 23
Freq (GHz)
24
25
26
27
Typical on board measurements
Main Characteristics
Tamb = +25° Vd1=Vd2=Vd3= +4.5V, Id (Quiescent)=89 0mA
C,
Symbol
F_op
P_1dB
G_lin
Parameter
Operating Frequency Range
Output power at 1dB compression
Linear Gain
Min
17
28.5
19
Typ
Max
27
Unit
GHz
dBm
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA5056QGG7033 - 02 Feb 07
1/12
/Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
