CHA5052
7-16GHz High Power Amplifier
Assembly recommandations
Note : Supply feed might be capacitively bypassed.
25µm diameter gold wire is to be prefered.
DC Pads Size : 100/100 µm
RF Pads Size : 125/200 µm
RF bounding wire length: 400µm
Chip thickness : 100 µm.
To Vd1,2 DC
Drain supply
To Vd3 DC
Drain supply
10nF
10nF
120pF
120pF
120pF
120pF
120pF
10nF
10nF
10nF
To Vg1,2 DC
Gate supply
To Vg3 DC Gate
supply
To Vd3 DC Drain
supply
Ref. : DSCHA50527092 - 02 Apr 07
8/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
