CHA5052
RoHS COMPLIANT
7-16GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5052 is a three-stage monolithic high
power amplifier.
The backside of the chip is both RF and DC
grounds. This helps to simplify the assembly
process.
The circuit is manufactured with a power P-HEMT
process, 0.15µm gate length, via holes through
the substrate.
It is supppplied in chip form
30
25
20
Vd1,2
RFi
Vg1,2
Vd3
RFou
Vg3Vd3
Gain and Return Losses versus frequency
dB(S11), dB(S22), dB(S21)
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
5
6
7
8
9
10
11
12
13
14
15
16
17
18
dB(S11)
dB(S21)
dB(S22)
Main Features
■
Broadband performance 7-16GHz
■
High gain: 21dB
■
ESD protections (see page 10)
■
29dBm Output Power @ 1dB
compression
■
Typical 37dBm 3
rd
order intercept point
■
DC power consumption, 700mA @ 5V
Frequency (GHz)
Typical on jig measurements
Main Characteristics
Tamb. = 25° Vd = 5V
C,
Symbol
Fop
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Power Supply quiescent current
Min
7
Typ
Max
16
Unit
GHz
dB
dBm
mA
G
P1dB
Id
21
29
700
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA50527092 - 02 Apr 07
1/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
