CHA5050-99F
17-26GHz Medium Power Amplifier
Electrical Characteristics
Tamb =+25°C, Vd = 6V, Id (Quiescent) = 230 mA, CW mode.
Symbol
Fop
Parameter
Operating frequency
Min
Typ
Max
Unit
GHz
dB
17
26
G
Small signal gain
22
8
RLin
RLout
P-1dB
P-3dB
Input Return Loss
dB
Output Return Loss
10
dB
Output power @ 1dBcomp
Output power @ 3dBcomp
25
dBm
dBm
%
25.5
20
PAE_ P-3dB Power Added Efficiency @ 3dBcomp
Id_ P-3dB
Vd1, Vd2
Id
Supply drain current @ 3dBcomp
Drain supply voltage
Supply quiescent current (1)
Gate supply voltage
320
6
mA
V
230
-0.5
mA
V
Vg
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A bonding wire of typically 0.2 to 0.25nH will improve the matching at the accesses.
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Cmp
Vd
Parameter
Values
Unit
dB
V
Compression level (2)
Supply voltage (3)
8
8
Id
Supply quiescent current
Supply current in saturation
Supply voltage
400
mA
mA
V
Id_sat
Vg
450
-0.2
Tj
Maximum junction temperature
Storage temperature range
175
°C
°C
Tstg
-55 to +150
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
(3) Without RF input power.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vd
Pad No
D1,D2,D3,D4
G1
Parameter
DC drain Voltage
Values
6
≈-0.5(1)
230
Unit
V
Vg
DC gate Voltage
V
Id
DC Drain current controlled with Vg
mA
(1) To be adjusted until to obtain Id: 230mA
Ref : DSCHA50502152 - 31 May 12
2/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
