CHA5012
X Band Driver Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5012 chip is a monolithic two-
stage medium power amplifier designed for
X band applications.
This device is manufactured using a GaInP
HBT process, including via holes through
the substrate and air bridges. A nitride
layer protects the transistors and the
passive components. Special heat removal
techniques are implemented to guarantee
high reliability.
To simplify the assembly process:
•
the backside of the chip is both RF
and DC grounded
•
bond pads and back side are gold
plated for compatibility with eutectic
die attach method and thermosonic
or thermocompression bonding
process.
Main Features
■
Frequency band : 9.2-10.8 GHz
■
Pout @3dB Gain compression : 29.5 dBm
■
P.A.E @3dB Gain Compression : 40 %
■
Two biasing modes:
•
Digital control thanks to TTL interface
•
Analog control thanks to biasing circuit
3
■
Chip size: 2.87 x 1.47 x 0.1 mm
Pout & PAE @ 3dB gain compression and Linear Gain
(Temperature 25°
C)
Main Characteristics
Tamb = +25° Vc = +7.5V (Pulse 100µs 20%)
C,
Symbol
Fop
G
P3dB
Icq
Parameter
Operating frequency range
Small signal gain
Output power at 3dB compression
Power supply quiescent current
Min
9.2
21
23
29.5
Typ
Max
10.8
Unit
GHz
dB
dBm
mA
200
ESD Protections : Electrostatic discharge sensitive device observe handling precautions
Ref. : DSCHA50120179 - 28 Jun 10
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
