CHA5012
Electrical Characteristics
Vc= +7.5V (Pulse 100µs 20%)
Symbol
Fop
G
∆G
∆G_T
Pin
P1dB
P3dB
X Band Driver Amplifier
Parameter
Operating frequency range
Small signal gain at 25°
C
Small signal gain flatness at 25°
C
Linear gain variation vs temperature
Input Power (1)
Output power at 1dB gain compression at 25°
C
Output power at 3dB gain compression at 25°
C
Output power at 3dB gain compression at 80°
C
Min
9.2
21
Typ
22.5
±0.5
-0.025
Max
10.8
Unit
GHz
dB
dB
dB/°
C
17
28
27.5
27
29.5
29
40
37
-12
-10
7.5
200
290
5
5
1
0
2.5
5
0.4
-10
-7
dBm
dBm
dBm
PAE_3dBc
PAE at 3dB gain compression at 25°
C
PAE at 3dB gain compression at 80°
C
%
dB
dB
V
mA
mA
V
mA
mA
V
mA
dBS11
dBS22
Vc
Icq
Ic_
3dBc
Vctrl
Ictrl
I_TI
TI_Low
TI_High
(1)
(2)
Input Return Loss
Output Return Loss
Power supply voltage
Power supply quiescent current (2)
Consumption under 3dB compression
Collector current control voltage
Biasing circuit consumption
TTL input consumption
TTL input voltage low level
TTL input voltage high level (2)
Output Load 50
For Vc=7.5V, TTL interface settles Icq to 200 mA when TI=TI_High . If needed, Icq can be tuned
thanks to Vctrl if the analog biasing circuit is used
Absolute Maximum Ratings
(3)
Tamb = 25°
C
Symbol
Top
Vc
Icq
Ic_sat
Vct
Tj
Tstg
(3)
(4)
Parameter
Operating temperature range
Power supply voltage (4)
Power supply quiescent current
Power supply current in saturation
Collector current control voltage
Maximum Junction temperature
Storage temperature range
Values
-40 to +80
10
320
350
6.5
175
-55 to +125
Unit
°
C
V
mA
mA
V
°
C
°
C
Operation of this device above anyone of these parameters may cause permanent damage.
Without RF input power
Ref. DSCHA50120179 - 28 Jun 10
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
