CHA4693-QGG
17-27GHz Variable Gain Amplifier
Device thermal performances:
All the figures given in this section are obtained assuming that the QFN device is cooled
down only by conduction through the package thermal pad (no convection mode
considered).
The temperature is monitored at the package back side side interface (Tcase) as shown
below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below than the maximum value specified in the next table. So, the system PCB must
be designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature can not be
maintened below than the maximum temperature specified in order to guarantee the nominal
device life time (MTTF) (see the curve Pdis. Max).
DEVICE THERMAL SPECIFICATION : CHA4693-QGG
Max. junction temperature (Tj max)
:
169 °C
Max. continuous dissipated power @ Tcase=
85 °C :
1,1 W
=> Pdiss derating above Tcase=
85 °C :
13 mW /°C
Junction-Case thermal resistance (Rth J-C)*
:
<74 °C/W
Min. package back side operating temperature**
:
-40 °C
Max. package back side operating temperature**
:
85 °C
Min. storage temperature
:
-55 °C
Max. storage temperature
:
125 °C
*Rth J-C is calculated is a worst case where the hotter junction of the MMIC is considered.
**Tcase=Package back side temperature measured under the die-attach-pad.
1,2
1
Pdiss. Max. (W)
0,8
0,6
0,4
Pdiss. Max. (W)
0,2
0
-50
-25
0
25
50
75
100
125
Tcase (°C)
Tcase
Example of QFN 16L 3x3
back-side view, temperature
reference point (Tcase) location.
Ref. : DSCHA4693-QGG8144 - 23 May 08
4/16
Specifications subject to change without notice
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