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CHA4107-QDG_15 参数 Datasheet PDF下载

CHA4107-QDG_15图片预览
型号: CHA4107-QDG_15
PDF下载: 下载PDF文件 查看货源
内容描述: [C-band Medium Power Amplifier]
分类和应用:
文件页数/大小: 12 页 / 435 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA4107-QDG  
C-band Medium Power Amplifier  
Evaluation mother board  
Based on typically Ro4003 / 8mils or equivalent.  
Using a micro-strip to coplanar transition to access the package.  
Recommended for the implementation of this product on a module board.  
In CW mode, decoupling capacitors of 10nF ±10% are recommended for Drain & Gate  
accesses.  
In pulsed mode, decoupling capacitors of 100pF in parallel with decoupling capacitors  
of 1nF are recommended for Drain access. On Gate access, decoupling capacitors of  
100pF and 1 µF in parallel are recommended.  
See application note AN0017 for details.  
Ref. : DSCHA4107-QDG4188 - 07 Jul 14  
10/12  
Specifications subject to change without notice  
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France  
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34  
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