CHA4094
Tamb = +25°C, Vd1,2,3 = 3.5Volts
Symbol
Fop
G
∆G
Is
P1db
VSWRin
36-40GHz High Power Amplifier
Electrical Characteristics for Broadband Operation
Parameter
Operating frequency range (1)
Small signal gain (1) (2)
Small signal gain flatness (1) (2)
Reverse isolation (1)
Pulsed Output power at 1dB gain compression (1)
Input VSWR (1)
Min
36
7
Typ
Max
40
Unit
GHz
dB
dB
dB
dBm
9
±
1
30
22
2.0:1
2.0:1
750
920
VSWRout Output VSWR (1)
Id
Bias current (3)
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports. In the case of a jig or a module CW mode operation, the typical output
power may be around 2dB less.
(2) Vd1, 2, 3 = 2Volts
(3) Depends on Biasing point, see application note for recommended biasing point
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Ta
Drain bias voltage
Drain bias current
Gate bias voltage
Operating temperature range
Parameter
Values
4
1200
-2 to +0.4
-40 to +85
Unit
V
mA
V
°C
Tstg
(1)
Storage temperature range
-55 to +155
°C
Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA40949349 – 15 Dec. 99
2/4
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
