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CHA4094-99F/00 参数 Datasheet PDF下载

CHA4094-99F/00图片预览
型号: CHA4094-99F/00
PDF下载: 下载PDF文件 查看货源
内容描述: 36-40GHz高功率放大器 [36-40GHz High Power Amplifier]
分类和应用: 放大器射频微波功率放大器
文件页数/大小: 4 页 / 82 K
品牌: UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
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CHA4094
36-40GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4094 is a high gain broadband three-
stage balanced monolithic power amplifier. It is
designed for a wide range of applications, from
military to commercial communication systems.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Typical on wafer measurements :
15
Main Features
Broadband performances
22 dBm output power ( 1dB gain comp. )
9 dB
±
1 dB gain
Chip size : 1.65 X 2.05 X 0.10 mm
10
5
0
-5
-10
Gain
(dB)
-15
-20
-25
-30
28
30
32
34
36
38
40
42
OUT
IN
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
Id
Small signal gain
Output power at 1dB gain compression
Bias current
Parameter
Operating frequency range
Min
36
7
Typ
9
22
750
Max
40
Unit
GHz
dB
dBm
920
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA40949349 – 15 Dec. 99
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09