CHA4092
20-30GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4092 is a high gain broadband three-
stage balanced monolithic power amplifier. It is
designed for a wide range of applications, from
military to commercial communication systems.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Typical on wafer measurements :
Main Features
þ
Broadband performances : 20-30GHz
þ
22 dBm output power ( 1dB gain comp. )
þ
17 dB
±
1.5 dB gain
þ
Chip size : 1.65 X 2.15 X 0.10 mm
20
15
10
5
0
Gain
(dB)
-5
-10
-15
-20
-25
-30
15
20
25
30
35
IN
OUT
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Fop
G
P1dB
Id
Parameter
Operating frequency range
Small signal gain
Output power at 1dB gain compression
Bias current
Min
20
16
Typ
Max
30
Unit
GHz
dB
dBm
17
22
700
900
mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA40928021
1/4
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
