L-Band Low Noise Amplifier
CHA3801-QDG
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Vd
Parameter
Values
6.5
Unit
V
Drain bias voltage (Vg=-5V)
Control voltage
Vctrl
Vg
-6 to 0
-6 to 0
+17
V
Gate bias voltage (Vd=+5V)
Protection switch enabled
Protection switch disabled
Junction temperature
V
Pin
dBm
dBm
°C
Pin
+6
Tj
175
Ta
Operating temperature range
Storage temperature range
-40 to +85
-55 to +150
°C
Tstg
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
(2) Duration < 1s.
Typical Bias Conditions
Tamb.= +25°C
Symbol
Vd
Pin No
13, 14
7, 10
Parameter
Values
+5
Unit
V
Drain voltage
Gate voltage
Vg
–5
V
Ref. : DSCHA3801-QDG3119 - 29 Apr 13
3/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
