CHA3801-99F
L-Band Low Noise Amplifier
Main Characteristics
Tamb.= +25°C
Symbol
Parameter
Min
Typ
Max
Unit
GHz
dB
FRF
G (1)
RF input frequency Range
Gain
1
2
28
0.5
-15
-15
1.45
40
(1)
-
Gain flatness
dBp-p
dB
|S11|
|S22|
NF **
|S12|
OIP3 **
Input Return Loss
Output Return Loss
Noise Figure
dB
dB
Reverse Isolation
dB
Output Third order Intercept Point
27
dBm
dBm
mA
mA
mA
V
OP1dB ** Output 1dB Compression Point
15
Id_1a
Id_1b
Id_1c
Vd
Total drain current (mode 1a)
Total drain current (mode 1b)
Total drain current (mode 1c)
Drain Voltage
70
90
50
5
(1) Under working mode 1a and input protection disabled
These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports.
A bonding wire of typically 0.1 to 0.15nH will improve the matching at the accesses.
Working Modes
PAD #3
PAD #6
PAD #4
PAD #7
PAD #5
PAD #8
PAD #9
PAD #10
Mode
Description
1a
1b
1c
Nominal bias current (70mA)
High bias current (+30%)
Low bias current (-30%)
-5V
n.c.*
-5V
n.c.*
-5V
-5V
n.c. *
n.c. *
n.c. *
+5V
+5V
+5V
* not connected
PAD #2
Input protection state
enabled
GND
disabled
-5V
Ref. : DSCHA38012328 - 23 Nov 12
2/10
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
