CHA3688aQDG
RoHS COMPLIANT
12.5-30GHz Low Noise Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA3688aQDG is a three-stage
self-biased wide band monolithic low noise
amplifier.
The circuit is manufactured with a standard
P-HEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is available in lead-free package.
UMS
A3688A
A3667A
YYWWG
Gain and NF @ 115mA (BD grounded)
Main Features
■
Broadband performance 12.5 - 30GHz
■
2.1dB noise figure
■
26dB gain
■
26dBm Output IP3
■
Low DC power consumption
■
24L-QFN4x4 SMD package
■
RF ports ESD protected (see page 14)
Gain & NF (dB)
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
12
14
16
18
20
22
24
26
28
30
Gain
NF
Frequency (GHz)
Main Characteristics
Tamb = +25° Vd1=Vd2=Vd3 = +4V
C,
Symbol
NF
G
OIP3
Noise figure
Gain
3rd order intercept point (16 - 30GHz)
21
24
Pads: B, D = GND (High current configuration)
Min
Typ
2.1
26
26
Max
2.5
Unit
dB
dB
dBm
Parameter
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSCHA3688aQDG8073 - 13 Mar 08
1/16
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
