CHA3667a
7-20GHz Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3667a is a wide band monolithic
medium power amplifier.
It is designed for a wide range of
applications, from military to commercial
communication systems. The circuit is
manufactured with a Power-HEMT process,
0.15µm gate length, via hole through the
substrate.
It is ESD protected on RF ports thanks to DC
specific filter circuits .
It is supplied in chip form.
Vd
RFin
RFout
Main Features.
■
Broadband performance 7-20GHz
■
Self biased
■
23dB gain @2.7dB noise figure
■
20 dBm Output power at 1dB compression
■
DC power consumption, 175 mA @4.2V
■
Chip size:2,45 x1,21x0,1 mm
S21
S11
S22
Main Characteristics
Tamb. = 25° Vd = 4.2V
C,
Symbol
Fop
G
NF
P-1dB
Id
Parameter
Input frequency range
Small signal gain
Noise Figure
Output power at 1dB gain compression
Bias current
Min
7
23
2.7
20
175
Typ
Max
20
Unit
GHz
dB
dB
dBm
mA
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Electrical Characteristics on wafer
Ref. : DSCHA3667a7296 - 23 Oct 07
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
