CHA3667aQDG
RoHs COMPLIANT
7-20GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD package
Description
The CHA3667aQDG is a wide band
monolithic medium power amplifier.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a Power-
HEMT process, 0.15µm gate length, via hole
through the substrate.
It is ESD protected on RF ports thanks to DC
specific filter circuits.
It is available in lead-free SMD package.
S Parameters versus frequency
Gain & Input / Output return loss
(dB)
UMS
A3667A
YYWWG
Vd
RFin
RFout
Main Features
■
Broadband performance 7-20GHz
■
Self-biased
■
23dB gain @2.7dB noise figure
■
20dBm Output power@1dB compression
■
DC power consumption, 175 mA @4.2V
■
24L-QFN4X4 SMD package
■
ESD protected
25
20
15
10
5
0
-5
-10
-15
-20
-25
0
2
4
6
8
10
12
14
16
18
20
22
24
26
S11
S22
S21
Freq ( GHz)
Main Characteristics
Tamb. = 25° Vd = 4.2V
C,
Symbol
Fop
G
NF
P-1dB
Id
Parameter
Input frequency range
Small signal gain
Noise Figure
Output power at 1dB gain compression
Bias current
Min
7
23
2.7
20
175
Typ
Max
20
Unit
GHz
dB
dB
dBm
mA
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions
Ref: DSCHA3667aQDG7296 - 23 Oct 07
1/14
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
