CHA3666
RoHS COMPLIANT
6-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3666 is a two-stage self biased
wide band monolithic low noise amplifier.
The circuit is manufactured with a standard
P-HEMT process: 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
D1
D2
RFin
RFout
UMS
P1
P2
N2
Main Features
■
Broadband performance 6-17GHz
■
1.8dB noise figure
■
26dBm 3
rd
order intercept point
■
17dBm power at 1dB compression
■
21dB gain
■
Low DC power consumption
24,0
22,0
20,0
18,0
16,0
14,0
12,0
10,0
8,0
6,0
4,0
2,0
0,0
4,00
6,00
8,00
10,00
12,00
14,00
16,00
18,00
Gain
NF
Main Characteristics
Symbol
NF
G
IP3
Noise figure
Gain
3rd order intercept point
Parameter
Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND
Min
Typ
1.8
19
21
26
Max
2
Unit
dB
dB
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA36666159 - 08 Jun 06
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
UMS [ UNITED MONOLITHIC SEMICONDUCTORS ]
